Semiconductors Stocks List

Symbol Grade Name
ALLWF Allied Minds Plc
ASMIY Asm International Nv
BESIY BE Semiconductor Industries N.V.
DAIUF Daifuku Co. Ltd.
FELTF Fuji Electric Holdin
FELTY Fuji Electric Co., Ltd.
FJTSF Fujitsu Ltd
FJTSY Fujitsu Ltd ADR
HOCPF HOYA Corporation
HOCPY HOYA Corporation
HPHTF Hamamatsu Photonics
HTHIF Hitachi Ltd Ord
HTHIY Hitachi
IQEPF IQE plc
ISDCF Inside Secure
ISRCF Ishares V Plc MSCI World IT USD
NMGC Neomagic Corporation
OCLN Originclear Inc.
OSAGF OSRAM Licht AG
POETF Poet Technologies Inc
PRZM Prism Tech Grp Cmn
QGPLF Quest For Growth Pri
RICOY Ricoh Co Ltd SP ADR
RNECF Renesas Electronics Corporation
RNECY Renesas Electronics Corp
SEKEF Seiko Epson Corp
SEKEY Seiko Epson Unsp ADR
SIUIF Semiconductor MFG In
SLOIF Soitec S.A
SMTOF Sumitomo Electric In
SMTOY Sumitomo Electric In
SOMMF Sumitomo Chemical Co
SOMMY Sumitomo Chemical Co
STRB Strasbaugh
SUOPY Sumco Corporation
TIMNF Timminco Ltd
TOSBF Toshiba Corp
UBLXF U-Blox Hldg Ag
YAMCY Yamaha Corp Spon ADR
SESMF SÜSS MicroTec SE
BESVF BE Semiconductor Industries N.V
ZHUZF Zhuzhou Csr Times
DNXWF Dynex Power
XNGIF Xingda Intl Hldgs Ltd Ord
NINOF Nikon Corp
JIAXF Jiangxi Copper Co Ltd H
NCRBF Nippon Carbon Co Ltd
IUSDF As One Corp
ZHUZY Zhuzhou Crrc Times Electric Co Ltd ADR
DKSHF Dksh Holding Ltd
ADTTF Advantest Corp
SMI Semiconductor Manufacturing International Corporation
HPHTY Hamamatsu Photonics
GRWXF Draper Esprit Plc
MX MagnaChip Semiconductor Corporation
TOKCF Tokyo Ohka Kogyo Co
SLOIY Soitec Sa ADR
PSI Invesco Dynamic Semiconductors ETF
RICOF Ricoh Co. Ltd [Japan]

Recent Signals

Date Stock Signal Type
2019-09-13 ASMIY Narrow Range Bar Range Contraction
2019-09-13 ASMIY Upper Bollinger Band Walk Strength
2019-09-13 ASMIY Slingshot Bullish Bullish Swing Setup
2019-09-13 BESIY Narrow Range Bar Range Contraction
2019-09-13 BESIY Bollinger Band Squeeze Range Contraction
2019-09-13 FELTY Bearish Engulfing Bearish
2019-09-13 FELTY Upper Bollinger Band Walk Strength
2019-09-13 FJTSY Crossed Above 20 DMA Bullish
2019-09-13 FJTSY Morning Star Bullish
2019-09-13 HOCPY Crossed Above 20 DMA Bullish
2019-09-13 HOCPY Narrow Range Bar Range Contraction
2019-09-13 HTHIY Upper Bollinger Band Walk Strength
2019-09-13 HTHIY Slingshot Bullish Bullish Swing Setup
2019-09-13 HTHIY Pocket Pivot Bullish Swing Setup
2019-09-13 IQEPF Narrow Range Bar Range Contraction
2019-09-13 IQEPF Stochastic Buy Signal Bullish
2019-09-13 OCLN Fell Below 20 DMA Bearish
2019-09-13 OCLN Narrow Range Bar Range Contraction
2019-09-13 OCLN Non-ADX 1,2,3,4 Bearish Bearish Swing Setup
2019-09-13 OCLN 180 Bearish Setup Bearish Swing Setup
2019-09-13 POETF Bullish Engulfing Bullish
2019-09-13 QGPLF Crossed Above 20 DMA Bullish
2019-09-13 QGPLF Narrow Range Bar Range Contraction
2019-09-13 QGPLF Bollinger Band Squeeze Range Contraction
2019-09-13 QGPLF Pocket Pivot Bullish Swing Setup
2019-09-13 RNECY Narrow Range Bar Range Contraction
2019-09-13 RNECY Stochastic Reached Overbought Strength
2019-09-13 RNECY 180 Bullish Setup Bullish Swing Setup
2019-09-13 RNECY Pocket Pivot Bullish Swing Setup
2019-09-13 SEKEY Narrow Range Bar Range Contraction
2019-09-13 SEKEY Upper Bollinger Band Walk Strength
2019-09-13 SEKEY MACD Bullish Centerline Cross Bullish
2019-09-13 SMTOY Crossed Above 50 DMA Bullish
2019-09-13 SMTOY Narrow Range Bar Range Contraction
2019-09-13 SMTOY New Uptrend Bullish
2019-09-13 SMTOY Stochastic Reached Overbought Strength
2019-09-13 SMTOY Upper Bollinger Band Walk Strength
2019-09-13 SMTOY MACD Bullish Centerline Cross Bullish
2019-09-13 SOMMY Crossed Above 200 DMA Bullish
2019-09-13 SOMMY Narrow Range Bar Range Contraction
2019-09-13 SOMMY Upper Bollinger Band Walk Strength
2019-09-13 UBLXF Volume Surge Other
2019-09-13 UBLXF Narrow Range Bar Range Contraction
2019-09-13 YAMCY Volume Surge Other
2019-09-13 YAMCY Non-ADX 1,2,3,4 Bearish Bearish Swing Setup
2019-09-13 YAMCY Pocket Pivot Bullish Swing Setup

A semiconductor material has an electrical conductivity value falling between that of a metal, like copper, gold, etc. and an insulator, such as glass. Their resistance decreases as their temperature increases, which is behaviour opposite to that of a metal. Their conducting properties may be altered in useful ways by the deliberate, controlled introduction of impurities ("doping") into the crystal structure. Where two differently-doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers which include electrons, ions and electron holes at these junctions is the basis of diodes, transistors and all modern electronics. Some examples of semiconductors are silicon, germanium, and gallium arsenide. After silicon, gallium arsenide is the second most common semiconductor used in laser diodes, solar cells, microwave frequency integrated circuits, and others. Silicon is a critical element for fabricating most electronic circuits.
Semiconductor devices can display a range of useful properties such as passing current more easily in one direction than the other, showing variable resistance, and sensitivity to light or heat. Because the electrical properties of a semiconductor material can be modified by doping, or by the application of electrical fields or light, devices made from semiconductors can be used for amplification, switching, and energy conversion.
The conductivity of silicon is increased by adding a small amount of pentavalent (antimony, phosphorus, or arsenic) or trivalent (boron, gallium, indium) atoms (part in 108). This process is known as doping and resulting semiconductors are known as doped or extrinsic semiconductors. Apart from doping, the conductivity of a semiconductor can equally be improved by increasing its temperature. This is contrary to the behaviour of a metal in which conductivity decreases with increase in temperature.
The modern understanding of the properties of a semiconductor relies on quantum physics to explain the movement of charge carriers in a crystal lattice. Doping greatly increases the number of charge carriers within the crystal. When a doped semiconductor contains mostly free holes it is called "p-type", and when it contains mostly free electrons it is known as "n-type". The semiconductor materials used in electronic devices are doped under precise conditions to control the concentration and regions of p- and n-type dopants. A single semiconductor crystal can have many p- and n-type regions; the p–n junctions between these regions are responsible for the useful electronic behavior.
Although some pure elements and many compounds display semiconductor properties, silicon, germanium, and compounds of gallium are the most widely used in electronic devices. Elements near the so-called "metalloid staircase", where the metalloids are located on the periodic table, are usually used as semiconductors.
Some of the properties of semiconductor materials were observed throughout the mid 19th and first decades of the 20th century. The first practical application of semiconductors in electronics was the 1904 development of the cat's-whisker detector, a primitive semiconductor diode used in early radio receivers. Developments in quantum physics in turn allowed the development of the transistor in 1947 and the integrated circuit in 1958.

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